深次微米MOSFET元件可靠性研究---子計畫二：利用改良式浮動閘極法測量氧化層內缺陷所造成之漏電流與理論分析(II)

dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
dc.date.accessioned	2014-12-13T10:38:07Z
dc.date.available	2014-12-13T10:38:07Z
dc.date.issued	1998	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC87-2215-E009-044	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=396217&docId=69989	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/95068
dc.language.iso	zh_TW	en_US
dc.subject	深次微米	zh_TW
dc.subject	金氧半場效電晶體	zh_TW
dc.subject	漏電流	zh_TW
dc.subject	浮動閘	zh_TW
dc.subject	量子效應	zh_TW
dc.subject	Deep submicron	en_US
dc.subject	MOSFET	en_US
dc.subject	Leakage current	en_US
dc.subject	Floating gate	en_US
dc.subject	Quantum effect	en_US
dc.title	深次微米MOSFET元件可靠性研究---子計畫二：利用改良式浮動閘極法測量氧化層內缺陷所造成之漏電流與理論分析(II)	zh_TW
dc.title	Theory and Characterization of Trap Induced Oxide Leakage Current by Using a Modified Floating Gate Technique(II)	en_US
dc.type	Plan	en_US

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