GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING
| dc.citation.epage | 1621 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 1617 | en_US |
| dc.citation.volume | 141 | en_US |
| dc.citation.woscount | 28 | |
| dc.contributor.author | HSIEH, IJ | en_US |
| dc.contributor.author | FENG, MS | en_US |
| dc.contributor.author | KUO, KT | en_US |
| dc.contributor.author | LIN, P | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:03:57Z | |
| dc.date.available | 2014-12-08T15:03:57Z | |
| dc.date.issued | 1994-06-01 | en_US |
| dc.description.abstract | ZnGa2O4 films have been prepared by radio frequency (RF) magnetron sputtering at various total pressure, RF power, and substrate temperatures. Microstructure and crystallographic orientation were characterized by x-ray diffraction Surface morphologies were observed by scanning electron microscope. In addition, cathodoluminescence (CL) measurement was employed to observe the emission spectra of ZnGa2O4 films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 500-degrees-C in this investigation. A blue cathodoluminescent emission peaked at 470 nm was observed. Good luminescent properties were observed in the films which exhibit the standard ZnGa2O4 x-ray diffraction pattern. | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2473 | |
| dc.identifier.wosnumber | WOS:A1994NQ33800039 | |
| dc.language.iso | en_US | en_US |
| dc.title | GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING | en_US |
| dc.type | Article | en_US |