應用於深次微米CMOS元件之閘極氧化層與複晶矽介電層之技術開發
| dc.contributor.author | 雷添福 | en_US |
| dc.contributor.author | LEI TAN-FU | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:46:15Z | |
| dc.date.available | 2014-12-13T10:46:15Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2215-E009-036 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=720334&docId=135306 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/100693 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 應用於深次微米CMOS元件之閘極氧化層與複晶矽介電層之技術開發 | zh_TW |
| dc.title | Technology Development on Gate Oxides and Polysilicon Dielectric Layers for Deep Submicron CMOS Devices | en_US |
| dc.type | Plan | en_US |