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應用於深次微米CMOS元件之閘極氧化層與複晶矽介電層之技術開發
應用於深次微米CMOS元件之閘極氧化層與複晶矽介電層之技術開發
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892215E009036.pdf
(845.4 KB)
Date
2000
Authors
雷添福
LEI TAN-FU
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https://www.grb.gov.tw/search/planDetail?id=720334&docId=135306
https://ir.lib.nycu.edu.tw/handle/11536/100693
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