The Analysis of Nano-Patterned Sapphire Substrates-Induced Compressive Strain to Enhance Quantum-Confined Stark Effect of InGaN-Based Light-Emitting Diodes

Abstract

This paper demonstrates that the quantum-confined stark effect of InGaN-based light-emitting diodes can be enhanced by the means of using the hexagonal nano-post patterned sapphire substrates based on the increase of the post-duty cycle.