利用電荷幫浦分佈法研究深次微米N型MOS元件電漿製程傷害之可靠性
| dc.contributor.author | 莊紹勳 | en_US |
| dc.contributor.author | Chung Steve S | en_US |
| dc.contributor.department | 國立交通大學電子工程研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:36:04Z | |
| dc.date.available | 2014-12-13T10:36:04Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2215-E009-107 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=583902&docId=109710 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/93759 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 利用電荷幫浦分佈法研究深次微米N型MOS元件電漿製程傷害之可靠性 | zh_TW |
| dc.title | Charge pumping Profiling Technique for Reliability Analysis of Plasma Induced Damage in Deep-submicron n-MOSFETs | en_US |
| dc.type | Plan | en_US |