Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET
| dc.citation.epage | 330 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 325 | en_US |
| dc.citation.volume | 10 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Hu, Vita Pi-Ho | en_US |
| dc.contributor.author | Wu, Yu-Sheng | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:57Z | |
| dc.date.available | 2014-12-08T15:11:57Z | |
| dc.date.issued | 2011-03-01 | en_US |
| dc.description.abstract | This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poisson's equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (T(BI)) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined. | en_US |
| dc.identifier.doi | 10.1109/TNANO.2010.2041010 | en_US |
| dc.identifier.issn | 1536-125X | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TNANO.2010.2041010 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9162 | |
| dc.identifier.wosnumber | WOS:000290537500018 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Electrostatic integrity | en_US |
| dc.subject | germanium | en_US |
| dc.subject | germanium-on-nothing(GeON) | en_US |
| dc.subject | Poisson's equation | en_US |
| dc.subject | silicon-on-nothing (SON) | en_US |
| dc.subject | ultrathin body (UTB) | en_US |
| dc.title | Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET | en_US |
| dc.type | Article | en_US |