Diode-pumped passively Q-switched Nd : YAG laser at 1123 nm
| dc.citation.epage | 31 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 29 | en_US |
| dc.citation.volume | 79 | en_US |
| dc.citation.woscount | 28 | |
| dc.contributor.author | Chen, YF | en_US |
| dc.contributor.author | Lan, YP | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:49Z | |
| dc.date.available | 2014-12-08T15:38:49Z | |
| dc.date.issued | 2004-07-01 | en_US |
| dc.description.abstract | A diode-pumped Nd : YAG laser at 1123 nm is passively Q-switched by using a low doping concentration Cr4+ : YAG crystal as a saturable absorber. When pumped by a 1.5-W laser diode, the laser produces pulses of 50-ns duration with a pulse energy of as much as 15 muJ and a peak power of 300 W at a pulse-repetition rate of 10 kHz. | en_US |
| dc.identifier.doi | 10.1007/s00340-004-1526-2 | en_US |
| dc.identifier.issn | 0946-2171 | en_US |
| dc.identifier.journal | APPLIED PHYSICS B-LASERS AND OPTICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s00340-004-1526-2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26580 | |
| dc.identifier.wosnumber | WOS:000221675500005 | |
| dc.language.iso | en_US | en_US |
| dc.title | Diode-pumped passively Q-switched Nd : YAG laser at 1123 nm | en_US |
| dc.type | Article | en_US |