High performance CPW and microstrip ring resonators on silicon substrates
| dc.citation.epage | 514 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 511 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chen, CC | en_US |
| dc.contributor.author | Hung, BF | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | McAlister, SP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:31Z | |
| dc.date.available | 2014-12-08T15:38:31Z | |
| dc.date.issued | 2004-09-20 | en_US |
| dc.description.abstract | High performance CPW and novel microstrip ring resonators at similar to30 GHz and 40 GHz have been fabricated on Si substrates, using an optimized proton-implantation process. Very good insertion loss and resonator characteristics, close to those from ideal electromagnetic simulations, were measured. In contrast, the ring resonators on VLSI-standard Si, without implantation, have worse transmission and reflection loss, thus prohibiting applications in RF circuits. (C) 2004 Wiley Periodicals, Inc. | en_US |
| dc.identifier.doi | 10.1002/mop.20353 | en_US |
| dc.identifier.issn | 0895-2477 | en_US |
| dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/mop.20353 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26373 | |
| dc.identifier.wosnumber | WOS:000223312900026 | |
| dc.language.iso | en_US | en_US |
| dc.subject | CPW | en_US |
| dc.subject | ring resonators | en_US |
| dc.subject | VLSI | en_US |
| dc.subject | RF | en_US |
| dc.subject | Si | en_US |
| dc.title | High performance CPW and microstrip ring resonators on silicon substrates | en_US |
| dc.type | Article | en_US |