HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
| dc.citation.epage | 1951 | en_US |
| dc.citation.issue | 22 | en_US |
| dc.citation.spage | 1950 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | LIOU, BW | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:07Z | |
| dc.date.available | 2014-12-08T15:03:07Z | |
| dc.date.issued | 1995-10-26 | en_US |
| dc.description.abstract | A new Schottky diode structure which uses the p(+)-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown voltage (148V) and a low reverse leakage current density (8.4 mu A/cm(2)). | en_US |
| dc.identifier.doi | 10.1049/el:19951315 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:19951315 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1694 | |
| dc.identifier.wosnumber | WOS:A1995TE33900047 | |
| dc.language.iso | en_US | en_US |
| dc.subject | SCHOTTKY DIODES | en_US |
| dc.subject | POLYSILICON | en_US |
| dc.title | HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING | en_US |
| dc.type | Article | en_US |