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Antibunching Single-Photon Emission and Blinking Suppression of CdSe/ZnS Quantum Dots

dc.citation.epage3056en_US
dc.citation.issue10en_US
dc.citation.spage3051en_US
dc.citation.volume3en_US
dc.citation.woscount27
dc.contributor.authorYuan, C. T.en_US
dc.contributor.authorYu, Pyngen_US
dc.contributor.authorKo, H. C.en_US
dc.contributor.authorHuang, J.en_US
dc.contributor.authorTang, Jauen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:08:36Z
dc.date.available2014-12-08T15:08:36Z
dc.date.issued2009-10-01en_US
dc.description.abstractWe demonstrated that by property coupling to silver nanoprisms, single CdSe/ZnS semiconductor quantum dots (QDs) exhibited suppressed blinking behavior, an enhanced fluorescence intensity (similar to 2.5 fold), increased radiative decay rates (similar to 12.5,fold), and antibunching single-photon emission. All these modifications significantly promote the overall performance of the proposed single-photon sources based on colloidal semiconductor QDs.en_US
dc.identifier.doi10.1021/nn900760uen_US
dc.identifier.issn1936-0851en_US
dc.identifier.journalACS NANOen_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn900760uen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/6611
dc.identifier.wosnumberWOS:000271106100024
dc.language.isoen_USen_US
dc.subjectblinking suppressionen_US
dc.subjectsingle-photon emissionen_US
dc.subjectphoton antibunchingen_US
dc.subjectCdSe/ZnS quantum dotsen_US
dc.titleAntibunching Single-Photon Emission and Blinking Suppression of CdSe/ZnS Quantum Dotsen_US
dc.typeArticleen_US

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