Investigation of Backgate-Bias Dependence of Threshold-Voltage Sensitivity to Process and Temperature Variations for Ultra-Thin-Body Hetero-Channel MOSFETs

Abstract

This paper investigates the impact of backgate bias (V-bg) on the sensitivity of threshold voltage (V-th) to process and temperature variations for ultra-thin-body (UTB) GeOI and InGaAs-OI MOSFETs. Our study indicates that the quantum-confinement effect significantly suppresses the V-bg dependence of the V-th sensitivity to process and temperature variations. Since Si, Ge, and InGaAs channels exhibit different degrees of quantum confinement, the impact of quantum confinement has to be considered when one-to-one comparisons among hetero-channel UTB devices regarding variability are made. Our study is crucial to the robustness of multi-V-th designs with advanced UTB technologies.