Exciton Localization Behaviors of Basal Stacking Faults in a-Plane AlGaN Alloys
| dc.citation.epage | H495 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | H491 | en_US |
| dc.citation.volume | 158 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Huang, Huei-Min | en_US |
| dc.contributor.author | Wu, Yung-Chi | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:50Z | |
| dc.date.available | 2014-12-08T15:37:50Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.abstract | We study the basal plane stacking faults (BSFs) related optical properties in a-plane AlGaN alloys with different Al composition ranging from 0 to 0.28. The low-temperature photoluminescence (PL) spectra for AlGaN show two dominant peaks attributed to the emission of near band edge and BSFs-bound excitons, respectively. The PL integrated intensity ratio of the BSFs to NBE is found to correlate to the density of BSFs observed by the transmission electron microscopy. Finally, the exciton localization behaviors of BSFs in a-plane AlGaN alloys is observed and discussed in this study. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3561422] All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/1.3561422 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3561422 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26025 | |
| dc.identifier.wosnumber | WOS:000288867700082 | |
| dc.language.iso | en_US | en_US |
| dc.title | Exciton Localization Behaviors of Basal Stacking Faults in a-Plane AlGaN Alloys | en_US |
| dc.type | Article | en_US |