A new I-V model considering the impact-ionization effect initiated by the DIGBL current for the intrinsic n-channel poly-Si TFT's
| dc.citation.epage | 728 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 722 | en_US |
| dc.citation.volume | 46 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Chen, HL | en_US |
| dc.contributor.author | Wu, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:43Z | |
| dc.date.available | 2014-12-08T15:46:43Z | |
| dc.date.issued | 1999-04-01 | en_US |
| dc.description.abstract | Considering the impact-ionization mechanism occurring in the high drain-bias (V-DS) regime, a new I-V model considering the impact-ionization effect initiated by the drain-induced-grain-barrier-lowering (DIGBL) current has been established for the intrinsic n-channel poly-Si TFT, The simulation results with considering the developed impact-ionization current model are in excellent agreement with the experimental output characteristics of the intrinsic n-channel poly-Si TFT with the mask-gate length ranging from 5 mu m to 40 mu m. In resolving the physical parameters and their underlying operation mechanisms including the grain-barrier height, DIGBL current, and impact-ionization current, the developed I-V model will be beneficial to further understand the underlying physics of the intrinsic poky-Si TFT. | en_US |
| dc.identifier.doi | 10.1109/16.753706 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.753706 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31412 | |
| dc.identifier.wosnumber | WOS:000079394700016 | |
| dc.language.iso | en_US | en_US |
| dc.subject | DIGBL | en_US |
| dc.subject | impact-ionization | en_US |
| dc.subject | I-V model | en_US |
| dc.subject | poly-Si TFT | en_US |
| dc.title | A new I-V model considering the impact-ionization effect initiated by the DIGBL current for the intrinsic n-channel poly-Si TFT's | en_US |
| dc.type | Article | en_US |