深次微米元件研製及特性分析

dc.contributor.author	黃調元	en_US
dc.contributor.author	TIAO-YUANHUANG	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
dc.date.accessioned	2014-12-13T10:38:32Z
dc.date.available	2014-12-13T10:38:32Z
dc.date.issued	1997	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC86-2215-E009-046	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=278795&docId=50196	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/95480
dc.language.iso	zh_TW	en_US
dc.subject	深次微米	zh_TW
dc.subject	金氧半導體電晶體	zh_TW
dc.subject	短通道效應	zh_TW
dc.subject	SOI基片	zh_TW
dc.subject	Deep submicron	en_US
dc.subject	MOS transistor	en_US
dc.subject	Short channel effect	en_US
dc.subject	SOI substrate	en_US
dc.title	深次微米元件研製及特性分析	zh_TW
dc.title	Fabrication and Characterization of Deep Submicron Transistors	en_US
dc.type	Plan	en_US

Files

Now showing 1 - 1 of 1