Characterization of SOA in Time Domain and the Improvement Techniques for Using in High-Voltage Integrated Circuits
| dc.citation.epage | 382 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.volume | 12 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Chen, Wen-Yi | en_US |
| dc.contributor.author | Ker, Ming-Dou | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:38Z | |
| dc.date.available | 2014-12-08T15:23:38Z | |
| dc.date.issued | 2012-06-01 | en_US |
| dc.description.abstract | Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed. | en_US |
| dc.identifier.issn | 1530-4388 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16523 | |
| dc.identifier.wosnumber | WOS:000305085100026 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Electrical safe operating area (SOA) (eSOA) | en_US |
| dc.subject | power MOSFETs | en_US |
| dc.subject | SOA | en_US |
| dc.subject | snapback | en_US |
| dc.subject | thermal SOA (tSOA) | en_US |
| dc.title | Characterization of SOA in Time Domain and the Improvement Techniques for Using in High-Voltage Integrated Circuits | en_US |
| dc.type | Article | en_US |