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三維積體電路(3D IC)之矽晶直通孔(TSV)與其它關鍵技術製程整合研究及應力量測熱傳導模型分析( III )

dc.contributor.author陳冠能en_US
dc.contributor.authorCHEN KUAN-NENGen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
dc.date.accessioned2014-12-13T10:41:21Z
dc.date.available2014-12-13T10:41:21Z
dc.date.issued2012en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC101-2628-E009-005zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=2645670&docId=399140en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/98389
dc.language.isozh_TWen_US
dc.title三維積體電路(3D IC)之矽晶直通孔(TSV)與其它關鍵技術製程整合研究及應力量測熱傳導模型分析( III )zh_TW
dc.titleStudies of through Silicon VI a (Tsv) and Other Key Technologies in Three-Dimensional Integrated Circuit (3d Ic) with Stress Analysis and Thermal Conductivity Modelingen_US
dc.typePlanen_US

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