Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by P(+) substrate
| dc.citation.epage | 197 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 196 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Meng, CC | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:39:36Z | |
| dc.date.available | 2014-12-08T15:39:36Z | |
| dc.date.issued | 2004-02-05 | en_US |
| dc.description.abstract | The p(+) substrate plays an important role on the edge stability of p(+)n multiquantum well avalanche transit time devices. The p(+)n multiquantum well avalanche transit time devices on n(+) substrate easily burn out along the device edge at low breakdown current. The same structure on p(+) substrate can have the desired band diagram on device edge to eliminate edge burn-out and CW operation is thus achieved at 100.3 GHz. (C) 2004 Wiley Periodicals, Inc. | en_US |
| dc.identifier.doi | 10.1002/mop.11326 | en_US |
| dc.identifier.issn | 0895-2477 | en_US |
| dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/mop.11326 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27039 | |
| dc.identifier.wosnumber | WOS:000188288400005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | multiquantum well | en_US |
| dc.subject | IMPATT | en_US |
| dc.subject | millimeter-wave | en_US |
| dc.title | Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by P(+) substrate | en_US |
| dc.type | Article | en_US |