THINNER LIQUID-PHASE DEPOSITED OXIDE FOR POLYSILICON THIN-FILM TRANSISTORS
| dc.citation.epage | 475 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 473 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | YEH, CF | en_US |
| dc.contributor.author | LIN, SS | en_US |
| dc.contributor.author | FAN, CL | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:07Z | |
| dc.date.available | 2014-12-08T15:03:07Z | |
| dc.date.issued | 1995-11-01 | en_US |
| dc.description.abstract | To scale down the gate insulator thickness of polysilicon thin-film transistors (poly-Si TFT's), a thinner oxide is developed by liquid-phase deposition with a small quantity, of H2O added, producing a rather high-quality oxide. Poly-Si TFT with such a thin oxide reveals good performances in electric characteristics. Thus, the novel thinner oxide is a good candidate as a poly-Si TFT gate insulator in the near future. | en_US |
| dc.identifier.doi | 10.1109/55.468271 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.468271 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1690 | |
| dc.identifier.wosnumber | WOS:A1995TA68100002 | |
| dc.language.iso | en_US | en_US |
| dc.title | THINNER LIQUID-PHASE DEPOSITED OXIDE FOR POLYSILICON THIN-FILM TRANSISTORS | en_US |
| dc.type | Article | en_US |