NUMERICAL-SIMULATION OF SIDEGATING EFFECT IN GAAS-MESFETS
| dc.citation.epage | 704 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 698 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 22 | |
| dc.contributor.author | CHANG, SJ | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:34Z | |
| dc.date.available | 2014-12-08T15:04:34Z | |
| dc.date.issued | 1993-04-01 | en_US |
| dc.description.abstract | Two-dimensional simulation of the sidegating effect in GaAs MESFET's has been performed. The result confirms that Schottky contacts on a semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFET's. The threshold behavior in sidegating effect is found to correlate with the conduction behavior of the Schottky-i-n(sidegate) structure when the sidegate is negatively biased. Shielding and enhancement of the sidegating effect by the Schottky contacts have also been studied and the results agree with the experimental findings. Besides, the presence of hole traps in the semi-insulating substrate is found to be essential to the sidegating effect. | en_US |
| dc.identifier.doi | 10.1109/16.202780 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.202780 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3061 | |
| dc.identifier.wosnumber | WOS:A1993KR13800003 | |
| dc.language.iso | en_US | en_US |
| dc.title | NUMERICAL-SIMULATION OF SIDEGATING EFFECT IN GAAS-MESFETS | en_US |
| dc.type | Article | en_US |