Gain flattened erbium-doped amplifier with 34 nm flat bandwidth
| dc.citation.epage | 1088 | en_US |
| dc.citation.issue | 19 | en_US |
| dc.citation.spage | 1086 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Yeh, C. -H. | en_US |
| dc.contributor.author | Lin, M. -C. | en_US |
| dc.contributor.author | Chi, S. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:48Z | |
| dc.date.available | 2014-12-08T15:15:48Z | |
| dc.date.issued | 2006-09-14 | en_US |
| dc.description.abstract | A gain-flattened two-stage erbium-based fibre amplifier module, structured by an erbium-doped waveguide amplifier and an erbium-doped fibre amplifier in serial, is proposed and demonstrated experimentally. In an operating range of 1528 to 1562 nm, all the gain is above 35 d13 and the noise figure is distributed from 5.5 to 6.7 dB, and +/- 1.1 dB maximum gain variation is retrieved at an input saturation power of -25 dBm. As a result, the proposed amplifier not only enhances gain value but possesses flatness in the operating region. | en_US |
| dc.identifier.doi | 10.1049/el:20062334 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20062334 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11776 | |
| dc.identifier.wosnumber | WOS:000241610400012 | |
| dc.language.iso | en_US | en_US |
| dc.title | Gain flattened erbium-doped amplifier with 34 nm flat bandwidth | en_US |
| dc.type | Article | en_US |