Enhanced ferroelectric properties of Pb(Zr0.53Ti0.47)O-3 thin films on SrRuO3/Ru/SiO2/Si substrates

Abstract

Highly (110)-oriented Pb(Zr0.53Ti0.47)O-3 (PZT) films were deposited on SrRuO3 (SRO)/Ru/SiO2/Si substrates using a sol-gel method, in which SrRuO3 films were deposited at various substrate temperatures. The crystallinity of the PZT films was improved after the annealing process. The leakage current, dielectric constant, and polarization versus electric-field characteristics of PZT films were strongly dependent on the annealing and deposition temperatures of the SRO films. The 650 degreesC annealed PZT film grown on SRO has a leakage current of 9x10(-7) A/cm(2) at an applied field of 500 kV/cm, dielectric constant of 1306, remanent polarization (P-r) of 40.1 muC/cm(2) and coercive field (E-c) of 78.5 kV/cm at an applied voltage of 5 V. The PZT films indicated fatigue-free characteristics up to similar to1.0x10(12) switching cycles under 5 V bipolar pulse. (C) 2002 American Institute of Physics.