ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS
| dc.citation.epage | 229 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 228 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 18 | |
| dc.contributor.author | YANG, CK | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:20Z | |
| dc.date.available | 2014-12-08T15:03:20Z | |
| dc.date.issued | 1995-06-01 | en_US |
| dc.description.abstract | This letter reports that passivation effects of the H-2-plasma on the polysilicon thin-film transistors (TFT's) were greatly enhanced if the TFT's have a thin Si3N4 film On their gate-dielectrics. Compared to the conventional devices with only the SiO2 gate dielectric, the TFT's with Si3N4 have much more improvement on their subthreshold swing and field-effect mobility after H-2-plasma treatment. | en_US |
| dc.identifier.doi | 10.1109/55.790717 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.790717 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1887 | |
| dc.identifier.wosnumber | WOS:A1995RA18200005 | |
| dc.language.iso | en_US | en_US |
| dc.title | ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS | en_US |
| dc.type | Article | en_US |