SHALLOW DONOR IMPURITY STATES OF A SEMICONDUCTOR IN A UNIFORM MAGNETIC-FIELD

Abstract

The perturbative-variational method is used to study the hydrogen-like shallow donor impurity states of the isotropic semiconductor under a uniform magnetic field from a spherical symmetry approach. Using a magnetic field dependent parameter, which is added in the simple hydrogenic wave functions, the eigenvalues can be determined by optimizing the parameter. The results we obtained are in good agreement with the previous works up to gamma = 5 (e.g., 10(6) T for atoms) for the ground state. The extension to the transitional region by this method is considerably higher than other approaches.