高密度電漿源設計製作及其應用在半導體製程發展(III)

dc.contributor.author	蔡春鴻	en_US
dc.contributor.author	C.H.Tsai	en_US
dc.contributor.department	交通大學電信工程系	zh_TW
dc.date.accessioned	2014-12-13T10:48:23Z
dc.date.available	2014-12-13T10:48:23Z
dc.date.issued	2000	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC89-CS-D009-014	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=542283&docId=99633	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/101326
dc.language.iso	zh_TW	en_US
dc.subject	電漿源	zh_TW
dc.subject	超大型積體電路	zh_TW
dc.subject	極大型積體電路	zh_TW
dc.subject	Plasma source	en_US
dc.subject	VLSI	en_US
dc.subject	ULSI	en_US
dc.title	高密度電漿源設計製作及其應用在半導體製程發展(III)	zh_TW
dc.title	Development of High Density Plasma Sources for VLSI/ULSI Processing (III)	en_US
dc.type	Plan	en_US

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