Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi-modal dot height distributions
| dc.citation.epage | en_US | |
| dc.citation.issue | 3 | en_US |
| dc.citation.volume | 112 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:24:24Z | |
| dc.date.available | 2014-12-08T15:24:24Z | |
| dc.date.issued | 2012-08-01 | en_US |
| dc.description.abstract | The influence of quantum-dot (QD) height distribution on the detection wavelengths of InGaAs-capped quantum-dot infrared photodetectors (QDIPs) is investigated. For devices with 2.8 and 2.0 mono-layer (ML) InAs coverage, 7.6 and 10.4 mu m detection wavelengths are observed. The results suggest that reduced dot height would result in a longer detection wavelength. By using 2.4 ML InAs QDs with bi-modal dot height distributions, a 6-12 mu m broadband QDIP is achieved with the combination of similar to 8 and similar to 10 mu m peak detection wavelengths contributed by the larger and smaller InAs QDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745052] | en_US |
| dc.identifier.doi | 10.1063/1.4745052 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4745052 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16923 | |
| dc.identifier.wosnumber | WOS:000308335400126 | |
| dc.language.iso | en_US | en_US |
| dc.title | Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi-modal dot height distributions | en_US |
| dc.type | Article | en_US |