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Selective A- or B-site single termination on surfaces of layered oxide SrLaAlO4

dc.citation.epageen_US
dc.citation.issue5en_US
dc.citation.volume102en_US
dc.citation.woscount2
dc.contributor.authorBiswas, A.en_US
dc.contributor.authorRossen, P. B.en_US
dc.contributor.authorRavichandran, J.en_US
dc.contributor.authorChu, Y. -H.en_US
dc.contributor.authorLee, Y. -W.en_US
dc.contributor.authorYang, C. -H.en_US
dc.contributor.authorRamesh, R.en_US
dc.contributor.authorJeong, Y. H.en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:29:31Z
dc.date.available2014-12-08T15:29:31Z
dc.date.issued2013-02-04en_US
dc.description.abstractWe demonstrate that thermal annealing in cation controlled environments is an effective means to obtain atomically flat and chemically single terminated surfaces of a layer structured substrate. The effectiveness of the cation controlled annealing method is proved with SrLaAlO4, which is a representative layer structured substrate of A(2)BO(4) type. Potassium ion scattering, in particular, shows that the method allows not only single termination but also selective termination of either A-or B-site on the substrate. We further demonstrate that the chemical nature of underlying SrLaAlO4 substrates is of critical importance in the growth of SrRuO3 thin films resulting in different morphologies and transport properties. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790575]en_US
dc.identifier.doi10.1063/1.4790575en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4790575en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/21230
dc.identifier.wosnumberWOS:000314770300014
dc.language.isoen_USen_US
dc.titleSelective A- or B-site single termination on surfaces of layered oxide SrLaAlO4en_US
dc.typeArticleen_US

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