Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application
| dc.citation.issue | 11 | en_US |
| dc.citation.volume | 53 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chiang, Che-Yang | en_US |
| dc.contributor.author | Hsu, Heng-Tung | en_US |
| dc.contributor.author | Chang, Edward Y. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2015-07-21T11:20:38Z | |
| dc.date.available | 2015-07-21T11:20:38Z | |
| dc.date.issued | 2014-11-01 | en_US |
| dc.description.abstract | A fully integrated, monolithic, wideband linear power amplifier using pseudomorphic high-electron-mobility transistor (pHEMT) technology has been developed for long-term evolution (LTE) applications. Implemented through the stacked field-effect transistor (stacked-FET) configuration, the amplifier exhibited a small signal gain of 15 dB and an output power of 25 dBm at 1 dB compression (P-idB) with a power-added efficiency (PAE) of 36% from 1.7 to 2.7 GHz yielding 45% power bandwidth. Moreover, when tested under a 10 MHz LTE-modulated signal, the amplifier achieved a 3% error-vector-magnitude (EVM) at 23 dBm output power over the entire power bandwidth. (C) 2014 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/JJAP.53.110311 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.53.110311 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/124133 | |
| dc.identifier.wosnumber | WOS:000346462200011 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application | en_US |
| dc.type | Article | en_US |