Improved Electrical Performance and Uniformity of MILC Poly-Si TFTs Manufactured Using Drive-In Nickel-Induced Lateral Crystallization
| dc.citation.epage | 1178 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 1176 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Chang, Chih-Pang | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:08:23Z | |
| dc.date.available | 2014-12-08T15:08:23Z | |
| dc.date.issued | 2009-11-01 | en_US |
| dc.description.abstract | A new manufacturing method for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) using drive-in nickel-induced lateral crystallization (DILC) was proposed. In DILC, a F(+) implantation was used to drive Ni in the alpha-Si layer. To reduce Ni contamination, the remained Ni film was then removed and subsequently annealed at 590 degrees C. It was found that DILC TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON-state current, lower trap-state density, smaller standard deviations, and low OFF-state leakage current compared with conventional Ni-metal-induced lateral crystallization TFTs. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2031130 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2031130 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6493 | |
| dc.identifier.wosnumber | WOS:000271151500020 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Drive-in nickel-induced lateral crystallization (DILC) | en_US |
| dc.subject | fluorine ion (F(+)) implantation | en_US |
| dc.subject | thin-film transistors (TFTs) | en_US |
| dc.subject | uniformity | en_US |
| dc.title | Improved Electrical Performance and Uniformity of MILC Poly-Si TFTs Manufactured Using Drive-In Nickel-Induced Lateral Crystallization | en_US |
| dc.type | Article | en_US |