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High-performance solution-processed polymer space-charge-limited transistor

dc.citation.epage316en_US
dc.citation.issue3en_US
dc.citation.spage310en_US
dc.citation.volume9en_US
dc.citation.woscount20
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.contributor.authorHsu, Chain-Shuen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.date.accessioned2014-12-08T15:11:23Z
dc.date.available2014-12-08T15:11:23Z
dc.date.issued2008-06-01en_US
dc.description.abstractWe demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 10(4). The current density is higher than 1 mA/cm(2). (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.orgel.2007.11.012en_US
dc.identifier.issn1566-1199en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2007.11.012en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/8740
dc.identifier.wosnumberWOS:000255801100006
dc.language.isoen_USen_US
dc.subjectspace-charge-limited currenten_US
dc.subjectvertical transistoren_US
dc.titleHigh-performance solution-processed polymer space-charge-limited transistoren_US
dc.typeArticleen_US

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