Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation
| dc.citation.epage | en_US | |
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 24 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Hu, Vita Pi-Ho | en_US |
| dc.contributor.author | Wu, Yu-Sheng | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:09:42Z | |
| dc.date.available | 2014-12-08T15:09:42Z | |
| dc.date.issued | 2009-04-01 | en_US |
| dc.description.abstract | The electrostatic integrity for UTB GeOI MOSFETs is examined comprehensively by using an analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of the buried oxide thickness (T(BOX)) and back-gate bias (V(back-gate)) on the electrostatic integrity of GeOI devices is also examined. | en_US |
| dc.identifier.doi | 10.1088/0268-1242/24/4/045017 | en_US |
| dc.identifier.issn | 0268-1242 | en_US |
| dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/24/4/045017 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7422 | |
| dc.identifier.wosnumber | WOS:000266052900018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation | en_US |
| dc.type | Article | en_US |