Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's
| dc.citation.epage | 233 | en_US |
| dc.citation.spage | 232 | en_US |
| dc.contributor.author | Wang, TH | en_US |
| dc.contributor.author | Chang, TE | en_US |
| dc.contributor.author | Chiang, LP | en_US |
| dc.contributor.author | Huang, CM | en_US |
| dc.contributor.author | Guo, JC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:37Z | |
| dc.date.available | 2014-12-08T15:27:37Z | |
| dc.date.issued | 1996 | en_US |
| dc.identifier.isbn | 0-7803-3343-8 | en_US |
| dc.identifier.journal | 1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19878 | |
| dc.identifier.wosnumber | WOS:A1996BF88S00094 | |
| dc.language.iso | en_US | en_US |
| dc.title | Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's | en_US |
| dc.type | Proceedings Paper | en_US |
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