TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON
| dc.citation.epage | L1319 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | L1317 | en_US |
| dc.citation.volume | 27 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | CHIEN, HC | en_US |
| dc.contributor.author | ASHOK, S | en_US |
| dc.contributor.author | CHEN, MC | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:57Z | |
| dc.date.available | 2014-12-08T15:05:57Z | |
| dc.date.issued | 1988-07-01 | en_US |
| dc.identifier.issn | en_US | |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4506 | |
| dc.identifier.wosnumber | WOS:A1988P978500051 | |
| dc.language.iso | en_US | en_US |
| dc.title | TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON | en_US |
| dc.type | Article | en_US |
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