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Effect of CF4 Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistors

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dc.citation.volume157en_US
dc.citation.woscount3en_US
dc.contributor.authorChang, Chih-Pangen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2019-04-02T05:58:54Z
dc.date.available2019-04-02T05:58:54Z
dc.date.issued2010-01-01en_US
dc.description.abstractIn this study, a CF4 plasma etching treatment was applied to metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs). It was found that the electrical properties and reliability of the MILC poly-Si TFTs were improved by the treatment. The minimum off-state currents were also reduced. This is because this etching method involves not only passivating the trap states but also etching away the Ni-related defects on the top surface of MILC poly-Si.en_US
dc.identifier.doi10.1149/1.3265989en_US
dc.identifier.issn0013-4651en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3265989en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/149872
dc.identifier.wosnumberWOS:000273222700074en_US
dc.language.isoen_USen_US
dc.subjectcrystallisationen_US
dc.subjectelemental semiconductorsen_US
dc.subjectpassivationen_US
dc.subjectsemiconductor device reliabilityen_US
dc.subjectsemiconductor thin filmsen_US
dc.subjectsiliconen_US
dc.subjectsputter etchingen_US
dc.subjectthin film transistorsen_US
dc.titleEffect of CF4 Plasma on Properties and Reliability of Metal-Induced Lateral Crystallization Silicon Transistorsen_US
dc.typeArticleen_US

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