INTERACTION OF COBALT AND FIELD OXIDE DURING LOW-TEMPERATURE FURNACE ANNEALING
| dc.citation.epage | 757 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 756 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | CHEN, BS | en_US |
| dc.contributor.author | CHEN, MC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:56Z | |
| dc.date.available | 2014-12-08T15:04:56Z | |
| dc.date.issued | 1992-04-09 | en_US |
| dc.description.abstract | The interaction of cobalt and thermally grown field oxide (5000 angstrom) during low temperature furnace annealing (600-800-degrees-C) is described. It is found that the isolation function of oxide becomes unreliable and s-pit clusters from in the silicon substrate when the annealing temperature exceeds 700-degrees-C. Therefore, it is essential to limit the first annealing temperature of the selfaligned silicide scheme below 600-degrees-C. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3454 | |
| dc.identifier.wosnumber | WOS:A1992HP54300036 | |
| dc.language.iso | en_US | en_US |
| dc.subject | ANNEALING | en_US |
| dc.subject | SEMICONDUCTOR DEVICES AND MATERIALS | en_US |
| dc.title | INTERACTION OF COBALT AND FIELD OXIDE DURING LOW-TEMPERATURE FURNACE ANNEALING | en_US |
| dc.type | Article | en_US |