Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates
| dc.citation.epage | 371 | en_US |
| dc.citation.issue | 4-5 | en_US |
| dc.citation.spage | 367 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Tsai, FY | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.author | Shen, JX | en_US |
| dc.contributor.author | Oka, Y | en_US |
| dc.contributor.author | Cheng, HH | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:43Z | |
| dc.date.available | 2014-12-08T15:46:43Z | |
| dc.date.issued | 1999-04-01 | en_US |
| dc.description.abstract | The exciton dynamics in In0.15Ga0.85As/GaAs quantum wells grown on (111)B and (100)GaAs substrates are studied by the time-resolved photoluminescence (PL). We have found that the piezoelectric fields in (111)B samples affect the transient behavior of PL spectra. Compared with the reference (100) samples, we have confirmed that the piezoelectric effect induces slower exciton relaxation in (111)B strained quantum wells. (C) 1999 Elsevier Science Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0026-2692(98)00137-2 | en_US |
| dc.identifier.issn | 0026-2692 | en_US |
| dc.identifier.journal | MICROELECTRONICS JOURNAL | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0026-2692(98)00137-2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31417 | |
| dc.identifier.wosnumber | WOS:000079841600012 | |
| dc.language.iso | en_US | en_US |
| dc.title | Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates | en_US |
| dc.type | Article | en_US |