A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
| dc.citation.epage | en_US | |
| dc.citation.issue | 8 | en_US |
| dc.citation.volume | 52 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Wu, Yin-Hao | en_US |
| dc.contributor.author | Lee, Chuo-Han | en_US |
| dc.contributor.author | Chu, Chung-Ming | en_US |
| dc.contributor.author | Yeh, Yen-Hsien | en_US |
| dc.contributor.author | Chen, Chan-Lin | en_US |
| dc.contributor.author | Lee, Wei-I | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:31:58Z | |
| dc.date.available | 2014-12-08T15:31:58Z | |
| dc.date.issued | 2013-08-01 | en_US |
| dc.description.abstract | A-plane GaN was grown on r-plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([(1) over bar 100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography. (C) 2013 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/JJAP.52.08JB08 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.52.08JB08 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22578 | |
| dc.identifier.wosnumber | WOS:000323883100017 | |
| dc.language.iso | en_US | en_US |
| dc.title | A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy | en_US |
| dc.type | Article | en_US |