ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE
| dc.citation.epage | 26 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 24 | en_US |
| dc.citation.volume | 63 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | WU, SL | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:26Z | |
| dc.date.available | 2014-12-08T15:04:26Z | |
| dc.date.issued | 1993-07-05 | en_US |
| dc.description.abstract | This letter reports a stacked nitride/microcrystalline-silicon/oxide/silicon structure, which exhibits a higher electron injection efficiency, a less electron trapping rate, and a larger charge to breakdown than the normal oxide. Besides, the room-temperature resonant tunneling effect is also observed for this structure. | en_US |
| dc.identifier.doi | 10.1063/1.109738 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.109738 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2938 | |
| dc.identifier.wosnumber | WOS:A1993LK40600009 | |
| dc.language.iso | en_US | en_US |
| dc.title | ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE | en_US |
| dc.type | Article | en_US |
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