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High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent-Si3N4-Thickness Trapping Layer

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dc.citation.epage254en_US
dc.citation.spage252en_US
dc.citation.volume59en_US
dc.citation.woscount6en_US
dc.contributor.authorTsai, C. Y.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2019-04-02T05:57:55Z
dc.date.available2019-04-02T05:57:55Z
dc.date.issued2012-01-01en_US
dc.description.abstractWe made the MoN-[SiO2-LaAlO3]-[Ge-HfON]-[LaAlO3-SiO2]-Si charge-trapping (CT) Flash device with a record-thinnest 2.5-nm equivalent-Si3N4-thickness trapping layer, a large 4.4-V initial memory window, a 3.2-V ten-year extrapolated retention window at 125 degrees C, and a 3.6-V endurance window at 106 cycles, under very fast 100 mu s and low +/- 16-V program/erase pulses. These were achieved using Ge reaction with a HfON trapping layer for better CT and retention.en_US
dc.identifier.doi10.1109/TED.2011.2171970en_US
dc.identifier.issn0018-9383en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2011.2171970en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/150436
dc.identifier.wosnumberWOS:000298756100037en_US
dc.language.isoen_USen_US
dc.subjectCharge-trapping (CT) Flashen_US
dc.subjectGeen_US
dc.subjectHfONen_US
dc.subjectLaAlO3en_US
dc.subjectnonvolatile memory (NVM)en_US
dc.titleHigh-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent-Si3N4-Thickness Trapping Layeren_US
dc.typeArticleen_US

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