Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K
| dc.citation.epage | 120 | en_US |
| dc.citation.issue | 1-4 | en_US |
| dc.citation.spage | 118 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Ling, Hong-Shi | en_US |
| dc.contributor.author | Wang, Shiang-Yu | en_US |
| dc.contributor.author | Lee, Chien-Ping | en_US |
| dc.contributor.author | Lo, Ming-Cheng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:16Z | |
| dc.date.available | 2014-12-08T15:10:16Z | |
| dc.date.issued | 2009-01-01 | en_US |
| dc.description.abstract | We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al(0.3)Ga(0.7)As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In(0.15)Ga(0.85)M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time. | en_US |
| dc.identifier.doi | 10.1109/LPT.2008.2009130 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2008.2009130 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7849 | |
| dc.identifier.wosnumber | WOS:000263480100038 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Infrared detectors | en_US |
| dc.subject | photodetectors | en_US |
| dc.subject | quantum dots (QDs) | en_US |
| dc.subject | quantum effect semiconductor devices | en_US |
| dc.title | Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K | en_US |
| dc.type | Article | en_US |