STUDIES ON ARGON ION IMPLANT DAMAGED SILICON SURFACE BARRIERS
| dc.citation.epage | 296 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 296 | en_US |
| dc.citation.volume | 15 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | CHIEN, HC | en_US |
| dc.contributor.author | ASHOK, S | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:06:09Z | |
| dc.date.available | 2014-12-08T15:06:09Z | |
| dc.date.issued | 1986-09-01 | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4725 | |
| dc.identifier.wosnumber | WOS:A1986E194800025 | |
| dc.language.iso | en_US | en_US |
| dc.title | STUDIES ON ARGON ION IMPLANT DAMAGED SILICON SURFACE BARRIERS | en_US |
| dc.type | Meeting Abstract | en_US |
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