High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology
| dc.citation.epage | 3378 | en_US |
| dc.citation.issue | 6A | en_US |
| dc.citation.spage | 3377 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Ker, MD | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:48Z | |
| dc.date.available | 2014-12-08T15:40:48Z | |
| dc.date.issued | 2003-06-01 | en_US |
| dc.description.abstract | Polysilicon diodes used in sub-quarter-micron complementary metal oxide semiconductor (CMOS) technologies are characterized by transmission line pulse (TLP) measurement to investigate device characteristics in a high-current regime. The second-breakdown current (I-t2) of the polysilicon diode shows good linear dependence on the device junction perimeter. When the polysilicon diodes are connected in a stacked configuration for reducing parasitic capacitance, the stacked polysilicon diodes show no degradation in electrostatic discharge (ESD) robustness compared with a single polysilicon diode. Such CMOS process-compatible polysilicon diodes have been successfully used as on-chip ESD protection devices for GHz radio-frequency (RF) circuits. | en_US |
| dc.identifier.doi | 10.1143/JJAP.42.3377 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.42.3377 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27813 | |
| dc.identifier.wosnumber | WOS:000183927800017 | |
| dc.language.iso | en_US | en_US |
| dc.subject | polysilicon diode | en_US |
| dc.subject | parasitic capacitance | en_US |
| dc.subject | substrate noise | en_US |
| dc.subject | electrostatic discharge (ESD) | en_US |
| dc.subject | radio frequency (RF) | en_US |
| dc.title | High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology | en_US |
| dc.type | Article | en_US |