Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors
| dc.citation.epage | 1022 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 1020 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chen, Kun-Ming | en_US |
| dc.contributor.author | Tsai, Tzu-I | en_US |
| dc.contributor.author | Lin, Ting-Yao | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.author | Huang, Guo-Wei | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:31:57Z | |
| dc.date.available | 2014-12-08T15:31:57Z | |
| dc.date.issued | 2013-08-01 | en_US |
| dc.description.abstract | In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 mu m. Owing to the short gate length and adoption of salicide process, cutoff frequency (f (T)) of 17 GHz and maximum oscillation frequency of similar to 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of f (T) with channel thickness is mainly due to the change in transconductance. | en_US |
| dc.identifier.doi | 10.1109/LED.2013.2267809 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2267809 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22574 | |
| dc.identifier.wosnumber | WOS:000323911800029 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Channel thickness | en_US |
| dc.subject | gate length | en_US |
| dc.subject | radio frequency | en_US |
| dc.subject | thin-film transistors (TFTs) | en_US |
| dc.subject | transconductance | en_US |
| dc.title | Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors | en_US |
| dc.type | Article | en_US |