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A NEW APPROACH TO ANALYTICALLY SOLVING THE TWO-DIMENSIONAL POISSON EQUATION AND ITS APPLICATION IN SHORT-CHANNEL MOSFET MODELING

dc.citation.epage1956en_US
dc.citation.issue9en_US
dc.citation.spage1947en_US
dc.citation.volume34en_US
dc.citation.woscount21
dc.contributor.authorLIN, PSen_US
dc.contributor.authorWU, CYen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department工學院zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentCollege of Engineeringen_US
dc.date.accessioned2014-12-08T15:06:03Z
dc.date.available2014-12-08T15:06:03Z
dc.date.issued1987-09-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4613
dc.identifier.wosnumberWOS:A1987J592600009
dc.language.isoen_USen_US
dc.titleA NEW APPROACH TO ANALYTICALLY SOLVING THE TWO-DIMENSIONAL POISSON EQUATION AND ITS APPLICATION IN SHORT-CHANNEL MOSFET MODELINGen_US
dc.typeArticleen_US

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