Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows

Abstract

Optimal device integrity was achieved in Ni/SiGeOx/TiOy/TaN resistive memory by using a formingfree switch with a low switching power of 790 mu W, stable endurance of 10(4) cycles, optimal retention time of 10(5) s, resistance window of at least 1150x, and tight current distributions at 85 degrees C. These characteristics are attributed to the low current switching obtained using SiGeOx with a high oxygen vacancy density and highly defective TiOy grain boundaries.