Achieving good bias stress reliability in organic transistor with vertical channel

Abstract

Unlike organic field-effect transistor with accumulated channel at dielectric/semiconductor interface, vertical organic transistor exhibits bulk channel current and hence performs good bias stress reliability. Adding self-assemble-monolayer to treat vertical channel can further modulate the charge-trapping surrounding the base electrode and hence influence the bias stress reliability. During 4300-s positive/negative bias stresses, stable output current and on/off ratio are demonstrated by using octadecyltrichlorosilane (OTS)-passivated vertical channel. The good reliability together with the low operation voltage and the high output current make vertical organic transistors capable of driving organic light emitting diode. (C) 2014 Elsevier B.V. All rights reserved.