Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition
| dc.citation.epage | 430 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 427 | en_US |
| dc.citation.volume | 45 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Wen, TC | en_US |
| dc.contributor.author | Lee, WI | en_US |
| dc.contributor.author | Sheu, JK | en_US |
| dc.contributor.author | Chi, GC | en_US |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:44:07Z | |
| dc.date.available | 2014-12-08T15:44:07Z | |
| dc.date.issued | 2001-03-01 | en_US |
| dc.description.abstract | This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bull; Mg-doped InxGa1-xN is 1.65 x 10(19) cm(-3). Also, the RT photoluminescence (PL) spectra of Mg related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process. (C) 2001 Elsevier Science Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0038-1101(01)00044-2 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0038-1101(01)00044-2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29794 | |
| dc.identifier.wosnumber | WOS:000168511700009 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Mg-doped InxGa1-xN | en_US |
| dc.subject | wall measurement | en_US |
| dc.subject | carrier concentration | en_US |
| dc.subject | mobility | en_US |
| dc.subject | in mole fraction | en_US |
| dc.subject | photoluminescence | en_US |
| dc.title | Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition | en_US |
| dc.type | Article | en_US |