Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs
| dc.citation.epage | 1324 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1322 | en_US |
| dc.citation.volume | 83 | en_US |
| dc.citation.woscount | 39 | |
| dc.contributor.author | Liu, TA | en_US |
| dc.contributor.author | Tani, M | en_US |
| dc.contributor.author | Nakajima, M | en_US |
| dc.contributor.author | Hangyo, M | en_US |
| dc.contributor.author | Pan, CL | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:28Z | |
| dc.date.available | 2014-12-08T15:40:28Z | |
| dc.date.issued | 2003-08-18 | en_US |
| dc.description.abstract | The photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs. (C) 2003 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1604191 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1604191 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27630 | |
| dc.identifier.wosnumber | WOS:000184748600014 | |
| dc.language.iso | en_US | en_US |
| dc.title | Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs | en_US |
| dc.type | Article | en_US |