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Optimum design for a thermally stable multifinger power transistor

dc.citation.epage908en_US
dc.citation.issue5en_US
dc.citation.spage902en_US
dc.citation.volume49en_US
dc.citation.woscount28
dc.contributor.authorLiao, CHen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorWang, NLen_US
dc.contributor.authorLin, Ben_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:42:25Z
dc.date.available2014-12-08T15:42:25Z
dc.date.issued2002-05-01en_US
dc.description.abstractThe thermal stability of multifinger bipolar transistors has been analyzed theoretically. Coupled equations are solved to study the onset of instability and its dependence on the distributions of ballasting resistors. Analytical expressions were derived for the emitter ballasting distribution for optimum stable operation. Compared to conventional methods with uniform ballasting, the optimized design can significantly increase the stable operating current of the transistor. An absolutely stable operating condition is also derived. At this condition, the device never becomes unstable.en_US
dc.identifier.doi10.1109/16.998601en_US
dc.identifier.issn0018-9383en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.998601en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/28803
dc.identifier.wosnumberWOS:000175235300027
dc.language.isoen_USen_US
dc.subjectballasting resistoren_US
dc.subjectcoupling current-voltage (I-V) equationsen_US
dc.subjectheterojunction bipolar transistor (HBT)en_US
dc.subjectmultifinger transistoren_US
dc.subjectthermal effecten_US
dc.titleOptimum design for a thermally stable multifinger power transistoren_US
dc.typeArticleen_US

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