Traps and performance of MEH-PPV/CdSe(ZnS) nanocomposite-based organic light-emitting diodes

dc.citation.epageen_US
dc.citation.issue45en_US
dc.citation.volume19en_US
dc.citation.woscount14
dc.contributor.authorLee, Chih-Wenen_US
dc.contributor.authorRenaud, Cedricen_US
dc.contributor.authorHsu, Chain-Shuen_US
dc.contributor.authorNguyen, Thien-Phapen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.date.accessioned2014-12-08T15:10:39Z
dc.date.available2014-12-08T15:10:39Z
dc.date.issued2008-11-12en_US
dc.description.abstractWe report the fabrication and investigations of organic light-emitting diodes (OLEDs) using a composite made by mixing poly[2-methoxy-5(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) with CdSe/ZnS core/shell quantum dots (QDs). The electroluminescence efficiency of the studied devices was found to be improved as compared to devices using MEH-PPV. Moreover, the current density decreased with increasing QD concentration. We checked the effects of QDs on the electrical transport by determining the trap states, making use of the charge-based deep level transient spectroscopy (Q-DLTS) technique. The most striking result obtained is the decrease in trap density when adding QDs to the MEH-PPV polymer film. These results suggest that QDs would heal defects in nanocomposite-based devices and that CdSe/ZnS QDs prevent the trap center formation.en_US
dc.identifier.doi10.1088/0957-4484/19/45/455202en_US
dc.identifier.issn0957-4484en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/19/45/455202en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/8148
dc.identifier.wosnumberWOS:000259922000005
dc.language.isoen_USen_US
dc.titleTraps and performance of MEH-PPV/CdSe(ZnS) nanocomposite-based organic light-emitting diodesen_US
dc.typeArticleen_US

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